KUET Institutional Repository

A New Approach to Grow High Quality Bulk lnxGa1-xAs Crystal by Multi-component Zone Melting Method

Show simple item record

dc.contributor.advisor Islam, Dr. Md. Rafiqul
dc.contributor.author Rahman, Mohammad Shaifur
dc.date.accessioned 2018-08-11T07:10:07Z
dc.date.available 2018-08-11T07:10:07Z
dc.date.copyright 2005
dc.date.issued 2005-12
dc.identifier.other ID 0000000
dc.identifier.uri http://hdl.handle.net/20.500.12228/313
dc.description This thesis is submitted to the Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology in partial fulfillment of the requirements for the degree of Master of Science in Electrical and Electronic Engineering, December 2005. en_US
dc.description Cataloged from PDF Version of Thesis.
dc.description Includes bibliographical references (pages 73-77).
dc.description.abstract An analytical study has been carried out to grow high-quality bulk InGaAs crystals by the two-step multi-component zone melting (MCZM) method. Characterization of bulk InGaAs crystal grown by the two-step MCZM method has confirmed the existence of large amount of strain of the order of 10 in bulk InGaAs crystal due to approximately exponential variation of composition from 0.06 to 0.29 in the first step growth process of the two-step MCZM technique. From the experimental evidence, it has been confirmed that the composition-dependent strain is associated with the breakage issue in the MCZM grown crystals. Using an axially symmetrical strain model, the quantitative amount of strains and their distributions have been studied for various compositional profiles including the currently used profile. In addition, the spatial variations of strain components for various compositional profiles have been analyzed using the twodimensional strain maps. The strain values and their distributions corresponding to the various compositional profiles have been compared and a suitable compositional profile has been proposed to grow compositionally homogeneous high quality bulk InGaAs crystals using the MCZM method. Further, from the dependency of the strain values with the crystal length and diameter, the possibility of the growth of large-size crystals has been investigated. It has also been studied that the proposed compositional profile allows achieving the growth parameters easily for the two-step MCZM growth process. en_US
dc.description.statementofresponsibility Mohammad Shaifur Rahman
dc.format.extent 78 pages
dc.language.iso en_US en_US
dc.publisher Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh. en_US
dc.rights Khulna University of Engineering & Technology (KUET) thesis/ dissertation/internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Grow High Quality Bulk en_US
dc.subject lnGaAs en_US
dc.subject Multi-component Zone Melting Method en_US
dc.title A New Approach to Grow High Quality Bulk lnxGa1-xAs Crystal by Multi-component Zone Melting Method en_US
dc.type Thesis en_US
dc.description.degree Master of Science in Electrical and Electronic Engineering
dc.contributor.department Department of Electrical and Electronic Engineering


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search KUET IR


Browse

My Account

Statistics