Abstract:
Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are the heart of microelec-
tronic industries and found its application in almost every device from microprocessor, memory
to communication electronic devices. In the quest of high packing density, improved perfor-
mance, and low power consumption, size of MOSFETs are being reduced for last four decades,
and now it is approaching to its physical limits. Addressing to this issue, a novel XOI FET"
was proposed previously in order to continue the scaling as well to lower the power consumption.
But the XOI FET itself has to face some key challenges to penetrate the electronic industry.
In this research we address to each of the challenges associated with the materialization of XOI
FET and proposed their solution. Comparing the logic figure of merits, it is found that thinner
channel (3nm) XOI FET gives better result than thicker one. At thinner channel, interface
properties of XOI FET play a critical role, however their impact can be compensated. To study
the quality of the interface, ideal Capacitance-Voltage characteristics are reported that shows
an anomalous staircase nature. It is also reported that the XOI FET having InGaSb channel
material outperforms the InAsSb. From fabrication point of view, prospect of junction less XOI
FET for next generation logic devices is also presented.
