Kaysir, Md. Rejvi
(Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2012-01)
In recent years. it has been predicted that InN-based High Electron Mobility Transistors
(HEMTs) may be record fast among 111-Nitride transistors due to their highly attracting inherent
properties. Though the InN-based ...