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Design of High Efficiency lnxGa1-xN-Based Multi-Junction Solar Cells

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dc.contributor.advisor Bhuiyan, Dr. Ashraful Ghani
dc.contributor.author Islam, Md. Rafiqul
dc.date.accessioned 2018-08-10T12:21:23Z
dc.date.available 2018-08-10T12:21:23Z
dc.date.copyright 2006
dc.date.issued 2006-11
dc.identifier.other ID 0000000
dc.identifier.uri http://hdl.handle.net/20.500.12228/285
dc.description This thesis is submitted to the Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology in partial fulfillment of the requirements for the degree of Master of Science in Electrical and Electronic Engineering, November 2006. en_US
dc.description Cataloged from PDF Version of Thesis.
dc.description Includes bibliographical references (pages 73-77).
dc.description.abstract Photovoltaic (PV) power generation is becoming widespread as a clean and gentle energy source for the earth. The main drawback of currently used photovoltaic cell is its low conversion efficiency and materials with the appropriate band gaps that can perfectly match the broad range of solar radiation. Recently it has been shown that the energy gap of 1nGa1 N alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a perfect matching to the full-solar-spectrum. Therefore, InGa t N becomes a promising material for very high efficiency multijunction solar cell. Any desired value of bandgap can be obtained from this material choosing the appropriate composition. In this work, InGa.N-based multijunction solar cells have been designed theoretically for high efficiency and the performance of the designed solar cells are evaluated with various parameters. The theoretical design and performance evaluation are done by developing a simulation model. The developed mode optimized the solar cell design for high efficiency at different junction numbers. The efficiency is found to be varied from 24.49 to 45.35 % for single junction to eight junction solar cells. The current mismatches of multijunction solar cell are kept within 0.29%. The lattice mismatches between different cells were found to be varied from 0.86 to 3.15%. The increase in surface recombination velocity and emitter thickness decreases the efficiency. On the other hand, the increase in minority carrier lifetime of emitter and base, and doping density increase the efficiency. In order to get more accurate results the effect of depletion width was taken into account. However, no significant change is observed between the results without and with considering le depletion width. The performance of InGaN-based MJ solar cells under concentrator is studied. The efficiency is found to be varied from 24.49 to 39.28 (%) for single junction and 45.35 to 72.79 (%) for eight junction, without and with concentrator. respectively. This model can be applied to design the solar cells at any number of junctions. en_US
dc.description.statementofresponsibility Md. Rafiqul Islani
dc.format.extent 79 pages
dc.language.iso en_US en_US
dc.publisher Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh. en_US
dc.rights Khulna University of Engineering & Technology (KUET) thesis/ dissertation/internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Solar Cells en_US
dc.subject Solar en_US
dc.subject Photovoltaic en_US
dc.subject Power en_US
dc.subject Multijunction en_US
dc.title Design of High Efficiency lnxGa1-xN-Based Multi-Junction Solar Cells en_US
dc.type Thesis en_US
dc.description.degree Master of Science in Electrical and Electronic Engineering
dc.contributor.department Department of Electrical and Electronic Engineering


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