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Modeling and Simulation of CNT based tunnel FET

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dc.contributor.advisor Islam, Prof. Dr. Md. Rafiqul
dc.contributor.author Sarker, Md. Shamim
dc.date.accessioned 2018-08-10T12:58:27Z
dc.date.available 2018-08-10T12:58:27Z
dc.date.copyright 2017
dc.date.issued 2017-02
dc.identifier.other ID 0000000
dc.identifier.uri http://hdl.handle.net/20.500.12228/292
dc.description This thesis is submitted to the Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology in partial fulfillment of the requirements for the degree of Master of Science in Electrical and Electronic Engineering, February, 2017. en_US
dc.description Cataloged from PDF Version of Thesis.
dc.description Includes bibliographical references (pages 72-78).
dc.description.abstract MOSFETs are commonly used in high speed integrated circuits and are yielding smaller, faster and more functions at lower cost. Various problems exist with scaling of MOSFET devices including shorl channel effects such as drain induced barrier lowering, parasitic capacitance, velocity saturation e.t.c. which limit the performances of MOSFETs. Scaling issues of MOSFET devices lead to lower ON to OFF current ratio limited by temperature constrained 60mV/dec subthrcshold swing. A new type of device called 'Tunncl FET" is predicted to overcome these difficulties. TFET can beat 60m V/dec sublhreshold swing of MOSFET. In tunnel FET, carriers are transported by band to band tunneling and its OFF current is very low. This makes it ideal candidate for ultra-low power electronics. Since the tunneling FET relies on the band to band tunneling mechanism, the TFET using conventional material like silicon have very low on state current due to its large indirect band gap. Carbon nanotube has a J)otential to be the appropriate channel material in this new technology due to its unique quasi one dimensional properly such as high electron mobility and high Fermi velocity. This new type of device requires rigorous analysis with various structures and parameters and hence to find out optimum condition for practical device realization, in this thesis we proposed and simulated two double gate CNTTFF.T structures: (i) Oxide only over the channel (OXOC structure) (ii) Oxide extended over source to drain (OXESD structure), taking into account of different device parameters including dielectric strength and thickness of gate oxide materials, channel length, doping concentration and gale underlap. Here the transtr characteristics, on/off current (h)N/h]:J) ratio and subthreshold slope of the device are studied using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson's equation selfconsistently in NanoTCAD ViDES environment and found that OXOC structure shows significantly better performance than OXESD structure in all cases having highest ON current of 4046 j..tA/tm and suhthreshold swing of 10. 19 mV/decade so far reported for CNT TFET. The results obtained from the simulation for both of the device structures are explained by the energy band diagram and electric field. The presented study is expected to be useful for realizing the switching device capable of operating at high speed and low power applications. en_US
dc.description.statementofresponsibility Md. Shamim Sarker
dc.format.extent 79 pages
dc.language.iso en_US en_US
dc.publisher Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh. en_US
dc.rights Khulna University of Engineering & Technology (KUET) thesis/ dissertation/internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Simulation en_US
dc.subject Circuit en_US
dc.subject Power en_US
dc.title Modeling and Simulation of CNT based tunnel FET en_US
dc.type Thesis en_US
dc.description.degree Master of Science in Electrical and Electronic Engineering
dc.contributor.department Department of Electrical and Electronic Engineering


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