Browsing by Author "Islam, Dr. Md. Rafiqul"

Now showing items 1-7 of 7

Capacitance-Voltage Characterization of Ultra Scaled XOI FET: An Analytical Approach

Islam, Muhammad Mainul (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2017-07)

Device scaling is the key factor that drives the microelectronics revolution as described by Moore’s law. Reduction of the physical MOS device dimensions has been proved beneficial in terms of circuit speed, cost and ...
Impact of Strain on the Performance of InGaN-based Multij unction Solar Cell

Rahman, Md. Aminur (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2014-09)

Strain issue and its impact on the performance of InGaN-based multijunction solar cell (MJSC) is addressed for the first time in the present research work. The route of strain in MJSC is identified to be due to the change ...
InGaSb n-MOSFET: Modeling & Performance Analysis

Islam, Muhammad Shaffatul (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh, 2015-12)

Antimonide-based III-V materials are highly interested in the channel of low power and high-speed all-antimonide CMOS digital logic devices. In this thesis work InGaSb-based double gate (DG) nMOSFET architectures with ...
Modeling and Performance Analysis of 1.55 µm Quantum Well Edge Emitting Laser Based on InGaN

Islam, Md. Jahirul (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2012-01)

The advent of research work for longer wavelength 1.55 µm lasers, InGaN advances fast due to its compatible band gap energy and excellent properties. These lasers are well-suited and ideally matched with the existing ...
A New Approach to Grow High Quality Bulk lnxGa1-xAs Crystal by Multi-component Zone Melting Method

Rahman, Mohammad Shaifur (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2005-12)

An analytical study has been carried out to grow high-quality bulk InGaAs crystals by the two-step multi-component zone melting (MCZM) method. Characterization of bulk InGaAs crystal grown by the two-step MCZM method ...
Temperature Induced Anomalous Exciton Localization in InGaN/GaN and GaN/AlInN Multiple Quantum Wells

Hasan, Md. Soyaeb (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2016-08)

InGaN and AlInN alloys including their relevant Quantum Well (QW) structures have attracted intensive research interest due to their potential applications in numerous optoelectronic devices. However, the emission mechanism ...
Theoretical Performance Analysis of InN-Based Double Channel High Electron Mobility Transistors (DHEMTs)

Kaysir, Md. Rejvi (Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh., 2012-01)

In recent years. it has been predicted that InN-based High Electron Mobility Transistors (HEMTs) may be record fast among 111-Nitride transistors due to their highly attracting inherent properties. Though the InN-based ...

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Browsing by Author "Islam, Dr. Md. Rafiqul"

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