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InGaSb n-MOSFET: Modeling & Performance Analysis

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dc.contributor.advisor Islam, Dr. Md. Rafiqul
dc.contributor.author Islam, Muhammad Shaffatul
dc.date.accessioned 2018-05-18T11:46:59Z
dc.date.available 2018-05-18T11:46:59Z
dc.date.copyright 2015
dc.date.issued 2015-12
dc.identifier.other ID 0000000
dc.identifier.uri http://hdl.handle.net/20.500.12228/108
dc.description This thesis is submitted to the Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology in partial fulfillment of the requirements for the degree of Master of Science in Electrical and Electronic Engineering, December 2015. en_US
dc.description Cataloged from PDF Version of Thesis.
dc.description Includes bibliographical references (pages 51-57).
dc.description.abstract Antimonide-based III-V materials are highly interested in the channel of low power and high-speed all-antimonide CMOS digital logic devices. In this thesis work InGaSb-based double gate (DG) nMOSFET architectures with DG-nMOSFET are proposed and numerically simulated. To assess and hence to compare the ballistic performance of DG-JnMOSFET and, non-equilibrium greens function method is utilized under the framework of well-known SILVACO’s ATLAS device simulation package without taking into account of scattering. Wave function penetration to the oxide is taken into account in the simulation. In this study the effect of gate length on drain current and other logic figures of merit like subthreshold slope (SS), ION, IOFF, and ION/IOFF are investigated. The results obtained for DG-nMOSFET demonstrate that there is negligible dependence on the “ON” current with the gate length. Small increase in the OFF current is found for decreasing gate length from 15 nm to 13 nm, however, the OFF current increases significantly when the gate length decreases from 13 nm. Subthreshold slope decreases with increasing gate length. The maximum subthreshold swing is evaluated 80 mV/decade for the gate length 7nm, which reduces to 70 mV/decade for the gate length 15 nm. Also the threshold voltage decreases with decreasing gate length. Effect of the gate oxides (Al2O3 and HfO2) in same equivalent oxide thickness (EOT) is also studied. The shift in threshold voltage and change in ION/IOFF are found strong dependence with gate oxides having different dielectric constants. Further, the effect of gate underlap is analyzed for the gate lengths 10nm and 15nm with different underlap lengths. Drain current found to vary significantly for different underlap lengths when gate length is 10nm. However, for the gate length 15 nm the variation of drain current is insignificant with underlap length. The threshold voltage is also found to have strong dependence with gate length and gate underlap length. en_US
dc.description.statementofresponsibility Muhammad Shaffatul Islam
dc.format.extent 57 pages
dc.language.iso en_US en_US
dc.publisher Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh en_US
dc.rights Khulna University of Engineering & Technology (KUET) thesis/dissertation/internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Metal-Oxide-Semiconductor Field-Effect Transistor en_US
dc.subject Quantum Confinement Effects en_US
dc.subject InGaSb
dc.title InGaSb n-MOSFET: Modeling & Performance Analysis en_US
dc.type Thesis en_US
dc.description.degree Master of Science in Electrical and Electronic Engineering
dc.contributor.department Department of Electrical and Electronic Engineering

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