KUET Institutional Repository

Ultra-Scaled III-V XOI FETs For Next Generation Logic Application

Show simple item record

dc.contributor.advisor Islam, Prof. Dr. Md. Rafiqul
dc.contributor.author Alam, Md. Nur Kutubul
dc.date.accessioned 2018-05-16T11:54:36Z
dc.date.available 2018-05-16T11:54:36Z
dc.date.issued 2015-02
dc.identifier.other ID 0000000
dc.identifier.uri http://hdl.handle.net/20.500.12228/93
dc.description This thesis submitted in partial ful llment of the requirements for the degree of Master of Science in Engineering in the Department of Electrical and Electronic Engineering, February 2015. en_US
dc.description Cataloged from PDF Version of Thesis.
dc.description Includes bibliographical references (pages 46-53).
dc.description.abstract Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are the heart of microelec- tronic industries and found its application in almost every device from microprocessor, memory to communication electronic devices. In the quest of high packing density, improved perfor- mance, and low power consumption, size of MOSFETs are being reduced for last four decades, and now it is approaching to its physical limits. Addressing to this issue, a novel XOI FET" was proposed previously in order to continue the scaling as well to lower the power consumption. But the XOI FET itself has to face some key challenges to penetrate the electronic industry. In this research we address to each of the challenges associated with the materialization of XOI FET and proposed their solution. Comparing the logic figure of merits, it is found that thinner channel (3nm) XOI FET gives better result than thicker one. At thinner channel, interface properties of XOI FET play a critical role, however their impact can be compensated. To study the quality of the interface, ideal Capacitance-Voltage characteristics are reported that shows an anomalous staircase nature. It is also reported that the XOI FET having InGaSb channel material outperforms the InAsSb. From fabrication point of view, prospect of junction less XOI FET for next generation logic devices is also presented. en_US
dc.description.sponsorship Md. Nur Kutubul Alam
dc.format.extent 54 pages
dc.language.iso en_US en_US
dc.publisher Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh. en_US
dc.rights Khulna University of Engineering & Technology (KUET) thesis/dissertation/internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Metal-Oxide-Semiconductor Field Effect Transistors en_US
dc.subject InAsSb
dc.subject InGaSb
dc.title Ultra-Scaled III-V XOI FETs For Next Generation Logic Application en_US
dc.type Thesis en_US
dc.description.degree Master of Science in Electrical and Electronic Engineering
dc.contributor.department Department of Electrical and Electronic Engineering

Files in this item

This item appears in the following Collection(s)

Show simple item record

Search KUET IR


My Account